Srabanti chowdhury biography

  • Srabanti chowdhury diamond
  • Srabanti chowdhury google scholar
  • Srabanti received her B. Tech in Radiophysics and Electronics from Institute of Radiophysics and Electronics, India and her M.S and PhD in Electrical.
  • Srabanti Chowdhury

    Srabanti Chowdhury est une ingénieure électricienne indo-américaine qui est professeure agrégée dem génie électrique à l'université Stanford. Elle est chercheuse principale à l'Institut Précourt pour l'énergie&#;(en). À Stanford, elle travaille sur fransk artikel semi-conducteurs ultra-larges et à large bande interdite et sur l'ingénierie des appareils électroniques économes en énergie. Elle est directrice des collaborations scientifiques au Centre ULTRA dem recherche sur les frontières énergétiques ni Département dem l'Énergie des États-Unis.

    Formation

    [modifier | modifier le code]

    Chowdhury obtient son baccalauréat ett radiophysique et électronique à l'Institut dem radiophysique et d'électronique dem l'université dem Calcutta[1]. Après avoir obtenu son diplôme de premier cycle, elle travaille dans le secteur des entreprises à Bangalore[1]. Elle décide finalement dem poursuivre des études dem doctorat et déménage aux États-Unis[1]. Elle est étudiante diplômée à l'univ

    Biography

     

     

     

     

     

     

    Srabanti Chowdhury 

     

    Srabantireceived her B. Tech in Radiophysics and Electronics from Institute of Radiophysics and Electronics, India and her M.S and PhD in Electrical Engineering from University of California, Santa Barbara.

    After finishing her undergraduate studies in India, Srabanti briefly spent a year and a half, exploring the corporate world working in Bangalore, after which she decided to pursue doctoral studies in Electrical engineering.  She joined Prof. Umesh Mishra’s group at UC Santa Barbara where she completed her MS (Jun’08) and PhD (Dec’10) in Electrical and Computer Engineering. In her PhD. work, she developed GaN-based vertical devices for power conversion and demonstrated the first vertical GaN power device (CAVET) on single crystalline Gallium Nitride material with then-record (highest) breakdown electric field. After her PhD she joined Transphorm, a California-based company to develop and c

    People

    Principal Investigator

    Dr. Srabanti Chowdhury 

    Srabantireceived her B. Tech in Radiophysics and Electronics from Institute of Radiophysics and Electronics, India and her M.S and PhD in Electrical Engineering from University of California, Santa Barbara. Currently she is the leader of the Chowdhury Research Group in the department of Electrical and Computer Engineering department at University of California, Davis.

    Postdoctoral  Researchers

     Dr. Matthew A. Laurent (present)

    Dr. Laurent received his B.S. in Applied Physics from Rensselaer Polytechnic Institute in , and his Ph.D. in Electrical and Computer Engineering from University of California, Santa Barbara in   Matt’s research interests include metalorganic chemical vapor deposition (MOCVD) of wide bandgap semiconductor materials, as well as understanding electrical transport in these materials and across heterojunction interfaces.  His goals are to apply the results of cutting-edge materials research to em

  • srabanti chowdhury biography